ELECTRICAL PROPERTIES OF As2 S3 Ge8 - Te THIN FILMS GROWN FROM THE VAPOR PHASE

Abstract

Chalcogenide glassy semiconductors (ChGS) are widely used due to their remarkable physical properties. Unusual properties of these materials originate from peculiarities of their energy spectrum and special chemistry, caused by lone - pair electrons of chalcogen atoms, as well as spatial and compositional disorder. This paper is devoted to study the electrical properties of a complex ChGS from the quaternary system As2S3Ge8-Te. Thin films of As2S3Ge8Te8, As2S3Ge8Te13, as well as the functional structures supplied with symmetrical electrodes of different metals, such as In, Au and Pt have been prepared and studied. Thin films were grown from priory synthetized materials, via thermal evaporation in vacuum of 10-4 Pa onto Pyrex or sintered Al2O3 substrates. The metallic electrodes have been deposited using the same method and similar technological conditions.