Sensing up to 40 atm Using Pressure-Sensitive Aero-GaN

Abstract

This work reports on the fabrication and characterization of a robust pressure sensor based on aero‐GaN. The ultraporous aeromaterial consists of GaN interconnected hollow micro‐tetrapods with the wall thickness of about 70 nm. The inner surface of hollow micro‐tetrapods contains an ultrathin film of ZnO genetically related to the sacrificial template used for epitaxial deposition of GaN. The pressure sensing measurements disclose a nearly linear dependence of the electrical conductance versus applied pressure up to 40 atm, a stable state signal being attained after an interval of about 10 s.