Please use this identifier to cite or link to this item: http://cris.utm.md/handle/5014/122
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dc.contributor.authorLEONTIE, Liviuen_US
dc.contributor.authorSPRINCEAN, Veaceslaven_US
dc.contributor.authorUNTILA, Dumitruen_US
dc.contributor.authorSPALATU, Nicolaeen_US
dc.contributor.authorCARAMAN, Iulianaen_US
dc.contributor.authorCOJOCARU, Alaen_US
dc.contributor.authorSUSU, Oanaen_US
dc.contributor.authorLUPAN, Olegen_US
dc.contributor.authorEVTODIEV, Igoren_US
dc.contributor.authorVATAVU, Elmiraen_US
dc.contributor.authorTIGINYANU, Ionen_US
dc.contributor.authorCARLESCU, Aurelianen_US
dc.contributor.authorCARAMAN, Mihailen_US
dc.date.accessioned2020-03-04T15:57:11Z-
dc.date.available2020-03-04T15:57:11Z-
dc.date.issued2019-11-01-
dc.identifier.citationTY - JOUR AU - Leontie, Liviu AU - Sprincean, Veaceslav AU - Untila, Dumitru AU - Spalatu, N. AU - Caraman, Iuliana AU - Cojocaru, A. AU - Susu, Oana AU - Oleg, Lupan AU - Evtodiev, Igor AU - Vatavu, Elmira AU - Tiginyanu, Ion AU - Carlescu, Aurelian AU - Caraman, Mihail PY - 2019/08/01 SP - 137502 T1 - Synthesis and optical properties of Ga2O3 nanowires grown on GaS substrate VL - 689 DO - 10.1016/j.tsf.2019.137502 JO - Thin Solid Films ER -en_US
dc.identifier.urihttp://cris.utm.md/handle/5014/122-
dc.description.abstractGallium oxide (β-Ga2O3) nanowires were synthesized by heat treatment of single crystal β-GaS plates in air. Crystal structure and composition of synthesized materials were studied by X-ray diffraction, energy dispersive X-ray spectroscopy and Raman spectroscopy. Thermal treatment of β-GaS plates at 1023 K leads to the formation of a Ga2O3 (native oxide) layer on β-GaS (0001) surface of plates. Layer thickness and size of Ga2O3 wires contained were found to depend on temperature and duration of applied heat treatment. For 1023 K and 6 h, the length of Ga2O3 wires laid in the range from units to tens of nanometers, while for 1123 K and 30 min, between 30 and 40 μm.en_US
dc.language.isoenen_US
dc.relation.ispartofTHIN SOLID FILMSen_US
dc.subjectGallium(III) trioxideen_US
dc.subjectGallium(III) sulfideen_US
dc.subjectThermal treatmenten_US
dc.subjectOxidationen_US
dc.subjectStructural propertiesen_US
dc.subjectPhotoluminescenceen_US
dc.titleSynthesis and optical properties of Ga2O3 nanowires grown on GaS substrateen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.tsf.2019.137502-
item.grantfulltextopen-
item.languageiso639-1other-
item.fulltextWith Fulltext-
crisitem.author.deptDepartment of Microelectronics and Biomedical Engineering-
crisitem.author.deptDepartment of Microelectronics and Biomedical Engineering-
crisitem.author.orcid0000-0002-7913-9712-
crisitem.author.orcid0000-0003-0893-0854-
crisitem.author.parentorgFaculty of Computers, Informatics and Microelectronics-
crisitem.author.parentorgFaculty of Computers, Informatics and Microelectronics-
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