Please use this identifier to cite or link to this item:
http://cris.utm.md/handle/5014/122
DC Field | Value | Language |
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dc.contributor.author | LEONTIE, Liviu | en_US |
dc.contributor.author | SPRINCEAN, Veaceslav | en_US |
dc.contributor.author | UNTILA, Dumitru | en_US |
dc.contributor.author | SPALATU, Nicolae | en_US |
dc.contributor.author | CARAMAN, Iuliana | en_US |
dc.contributor.author | COJOCARU, Ala | en_US |
dc.contributor.author | SUSU, Oana | en_US |
dc.contributor.author | LUPAN, Oleg | en_US |
dc.contributor.author | EVTODIEV, Igor | en_US |
dc.contributor.author | VATAVU, Elmira | en_US |
dc.contributor.author | TIGINYANU, Ion | en_US |
dc.contributor.author | CARLESCU, Aurelian | en_US |
dc.contributor.author | CARAMAN, Mihail | en_US |
dc.date.accessioned | 2020-03-04T15:57:11Z | - |
dc.date.available | 2020-03-04T15:57:11Z | - |
dc.date.issued | 2019-11-01 | - |
dc.identifier.citation | TY - JOUR AU - Leontie, Liviu AU - Sprincean, Veaceslav AU - Untila, Dumitru AU - Spalatu, N. AU - Caraman, Iuliana AU - Cojocaru, A. AU - Susu, Oana AU - Oleg, Lupan AU - Evtodiev, Igor AU - Vatavu, Elmira AU - Tiginyanu, Ion AU - Carlescu, Aurelian AU - Caraman, Mihail PY - 2019/08/01 SP - 137502 T1 - Synthesis and optical properties of Ga2O3 nanowires grown on GaS substrate VL - 689 DO - 10.1016/j.tsf.2019.137502 JO - Thin Solid Films ER - | en_US |
dc.identifier.uri | http://cris.utm.md/handle/5014/122 | - |
dc.description.abstract | Gallium oxide (β-Ga2O3) nanowires were synthesized by heat treatment of single crystal β-GaS plates in air. Crystal structure and composition of synthesized materials were studied by X-ray diffraction, energy dispersive X-ray spectroscopy and Raman spectroscopy. Thermal treatment of β-GaS plates at 1023 K leads to the formation of a Ga2O3 (native oxide) layer on β-GaS (0001) surface of plates. Layer thickness and size of Ga2O3 wires contained were found to depend on temperature and duration of applied heat treatment. For 1023 K and 6 h, the length of Ga2O3 wires laid in the range from units to tens of nanometers, while for 1123 K and 30 min, between 30 and 40 μm. | en_US |
dc.language.iso | en | en_US |
dc.relation.ispartof | THIN SOLID FILMS | en_US |
dc.subject | Gallium(III) trioxide | en_US |
dc.subject | Gallium(III) sulfide | en_US |
dc.subject | Thermal treatment | en_US |
dc.subject | Oxidation | en_US |
dc.subject | Structural properties | en_US |
dc.subject | Photoluminescence | en_US |
dc.title | Synthesis and optical properties of Ga2O3 nanowires grown on GaS substrate | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1016/j.tsf.2019.137502 | - |
item.grantfulltext | open | - |
item.languageiso639-1 | other | - |
item.fulltext | With Fulltext | - |
crisitem.author.dept | Department of Microelectronics and Biomedical Engineering | - |
crisitem.author.dept | Department of Microelectronics and Biomedical Engineering | - |
crisitem.author.orcid | 0000-0002-7913-9712 | - |
crisitem.author.orcid | 0000-0003-0893-0854 | - |
crisitem.author.parentorg | Faculty of Computers, Informatics and Microelectronics | - |
crisitem.author.parentorg | Faculty of Computers, Informatics and Microelectronics | - |
Appears in Collections: | Journal Articles |
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1-s2.0-S0040609019305309-main.pdf | 1.19 MB | Adobe PDF | View/Open |
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