Please use this identifier to cite or link to this item: http://cris.utm.md/handle/5014/1371
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dc.contributor.authorMONAICO, Eduard V.en_US
dc.contributor.authorURSAKI, Veaceslaven_US
dc.contributor.authorMONAICO, Elena I.en_US
dc.contributor.authorTIGINYANU, Ionen_US
dc.date.accessioned2022-08-22T08:10:36Z-
dc.date.available2022-08-22T08:10:36Z-
dc.date.issued2022-
dc.identifier.urihttp://cris.utm.md/handle/5014/1371-
dc.description.abstractThe invention relates to optoelectronics, in particular to infrared photodetector. Are known infrared-visible-ultraviolet radiation photodetectors based on metal-semiconductor-metal interdigital structures with Schottky diodes. Due to the strong electric field incorporated in the Schottky diode, these photodetectors demonstrate high photoresponse and rather short reaction time. However, the main disadvantage of these photodetectors is the necesity to form very fine structures, which can be formed only with the application of very expensive photolithographic procedures.en_US
dc.subjectPhotodetector, ultraviolet radiationen_US
dc.titleIR photodetector based on the GaAs nanowireen_US
dc.typeAwarden_US
dc.relation.conferenceICE-USV 2022en_US
item.grantfulltextopen-
item.fulltextWith Fulltext-
crisitem.author.deptDepartment of Microelectronics and Biomedical Engineering-
crisitem.author.deptDepartment of Microelectronics and Biomedical Engineering-
crisitem.author.orcid0000-0003-3293-8645-
crisitem.author.orcid0000-0003-4488-850X-
crisitem.author.orcid0000-0003-0893-0854-
crisitem.author.parentorgFaculty of Computers, Informatics and Microelectronics-
crisitem.author.parentorgFaculty of Computers, Informatics and Microelectronics-
Appears in Collections:02-Silver Medals
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