Please use this identifier to cite or link to this item: http://cris.utm.md/handle/5014/1478
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dc.contributor.authorCIOBANU, Vladimiren_US
dc.contributor.authorJIN, Irinaen_US
dc.contributor.authorBRANISTE, Tudoren_US
dc.contributor.authorTIGINYANU, Ionen_US
dc.date.accessioned2022-11-09T10:26:53Z-
dc.date.available2022-11-09T10:26:53Z-
dc.date.issued2022-
dc.identifier.urihttp://cris.utm.md/handle/5014/1478-
dc.description.abstractLarge-sized nanomembranes based on 2D semiconductor materials have gained significant attention for their fascinating properties in various applications. In this work, we demonstrate the fabrication of ultrathin β-Ga2O3 membranes with a thickness of just several tens of nanometers. The technological route includes the fabrication of GaN membranes using the Surface Charge Lithography approach and subsequent thermal treatment in air at 900 ◦C. The as-grown GaN membranes were completely transformed into β-Ga2O3 as disclosed by electron microcopy and XPS analysis. Thus, the combination of the SCL and thermal treatment under ambient conditions presents a cost-efficient approach for obtaining large-sized ultrathin membranes of β-Ga2O3 – a promising material for nano-electronics and photonics.en_US
dc.language.isoenen_US
dc.subjectNanomembranes, semiconductor, ultrathin β-Ga2O3 membranesen_US
dc.titleFabrication of β-Ga2O3 large scale nanomembranesen_US
dc.typeAwarden_US
dc.relation.conferenceInventica 2022en_US
item.fulltextWith Fulltext-
item.grantfulltextopen-
item.languageiso639-1other-
crisitem.author.deptDepartment of Microelectronics and Biomedical Engineering-
crisitem.author.orcid0000-0002-4588-2866-
crisitem.author.orcid0000-0001-6043-4642-
crisitem.author.orcid0000-0003-0893-0854-
crisitem.author.parentorgFaculty of Computers, Informatics and Microelectronics-
Appears in Collections:02-Silver Medals
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