Please use this identifier to cite or link to this item:
http://cris.utm.md/handle/5014/1479
DC Field | Value | Language |
---|---|---|
dc.contributor.author | CIOBANU, Vladimir | en_US |
dc.contributor.author | JIN, Irina | en_US |
dc.contributor.author | BRANISTE, Tudor | en_US |
dc.contributor.author | TIGINYANU, Ion | en_US |
dc.date.accessioned | 2022-11-09T10:36:23Z | - |
dc.date.available | 2022-11-09T10:36:23Z | - |
dc.date.issued | 2022 | - |
dc.identifier.uri | http://cris.utm.md/handle/5014/1479 | - |
dc.description.abstract | We propose the manufacture of heterostructure with wide bandgap (Eg) semiconductor nanowires (e.g. from Ga2O3 with Eg = 4.9 eV, or In2O3 with Eg ~ 3 eV) on narrow bandgap semiconductor support with good thermal conductivity () (e.g. GaAs with Eg = 1.44 eV and = 52 W/m•K or InP with Eg = 1.34 and = 68 W/m•K). The technological process consists from 2 steps: (i) anodization of semiconductor substrates for nanowires formation, (ii) heat treatment at optimized parameters that ensure the selective oxidation only of nanowires. The advantages: accessible and cost-effective technologies. | en_US |
dc.language.iso | en | en_US |
dc.subject | Heterostructures, semiconductor, nanowires | en_US |
dc.title | Process for obtaining heterostructures with wide-bandgap nanowires on narrow-bandgap semiconductor substrate | en_US |
dc.type | Award | en_US |
dc.relation.conference | Inventica 2022 | en_US |
item.grantfulltext | open | - |
item.languageiso639-1 | other | - |
item.fulltext | With Fulltext | - |
crisitem.author.dept | Department of Microelectronics and Biomedical Engineering | - |
crisitem.author.orcid | 0000-0002-4588-2866 | - |
crisitem.author.orcid | 0000-0001-6043-4642 | - |
crisitem.author.orcid | 0000-0003-0893-0854 | - |
crisitem.author.parentorg | Faculty of Computers, Informatics and Microelectronics | - |
Appears in Collections: | 02-Silver Medals |
Files in This Item:
File | Description | Size | Format | |
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Inventica_2022_Silver_Jin I..pdf | 7.6 MB | Adobe PDF | View/Open |
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