Please use this identifier to cite or link to this item: http://cris.utm.md/handle/5014/1479
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dc.contributor.authorCIOBANU, Vladimiren_US
dc.contributor.authorJIN, Irinaen_US
dc.contributor.authorBRANISTE, Tudoren_US
dc.contributor.authorTIGINYANU, Ionen_US
dc.date.accessioned2022-11-09T10:36:23Z-
dc.date.available2022-11-09T10:36:23Z-
dc.date.issued2022-
dc.identifier.urihttp://cris.utm.md/handle/5014/1479-
dc.description.abstractWe propose the manufacture of heterostructure with wide bandgap (Eg) semiconductor nanowires (e.g. from Ga2O3 with Eg = 4.9 eV, or In2O3 with Eg ~ 3 eV) on narrow bandgap semiconductor support with good thermal conductivity () (e.g. GaAs with Eg = 1.44 eV and  = 52 W/m•K or InP with Eg = 1.34 and  = 68 W/m•K). The technological process consists from 2 steps: (i) anodization of semiconductor substrates for nanowires formation, (ii) heat treatment at optimized parameters that ensure the selective oxidation only of nanowires. The advantages: accessible and cost-effective technologies.en_US
dc.language.isoenen_US
dc.subjectHeterostructures, semiconductor, nanowiresen_US
dc.titleProcess for obtaining heterostructures with wide-bandgap nanowires on narrow-bandgap semiconductor substrateen_US
dc.typeAwarden_US
dc.relation.conferenceInventica 2022en_US
item.grantfulltextopen-
item.languageiso639-1other-
item.fulltextWith Fulltext-
crisitem.author.deptDepartment of Microelectronics and Biomedical Engineering-
crisitem.author.orcid0000-0002-4588-2866-
crisitem.author.orcid0000-0001-6043-4642-
crisitem.author.orcid0000-0003-0893-0854-
crisitem.author.parentorgFaculty of Computers, Informatics and Microelectronics-
Appears in Collections:02-Silver Medals
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