Process for obtaining several non-connected pore networks in a semiconductor wafer for fluidic applications

Abstract

Two pore networks were produced at anodization of the surface of semiconductor wafer covered with a mask contains holes: (i) a network of primary pores, which propagate under the mask in a direction parallel to the surface of the sample and perpendicular to the edge of the mask; (ii) a network of secondary pores, which initially propagate in the hole of the mask in radial directions and subsequently change their direction of propagation in the direction of the primary pores.