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Please use this identifier to cite or link to this item: http://cris.utm.md/handle/5014/1547
DC FieldValueLanguage
dc.contributor.authorMONAICO, Eduard V.en_US
dc.date.accessioned2022-12-11T05:40:10Z-
dc.date.available2022-12-11T05:40:10Z-
dc.date.issued2022-
dc.identifier.urihttp://cris.utm.md/handle/5014/1547-
dc.descriptionNovember 10-11, Bucharest, Romaniaen_US
dc.description.abstractThe report will focus on different aspects of pore growth during electrochemical etching in a controlled fashion, transition from the porous semiconductor structures to the formation of semiconductor nanowires [2,3], as well as technologies for controlled electrochemical deposition of metal nanostructures into porous semiconductor templates.en_US
dc.language.isoenen_US
dc.relation20.80009.5007.20. Nanoarhitecturi în bază de GaN şi matrici tridimensionale din materiale biologice pentru aplicaţii în microfluidică şi inginerie tisularăen_US
dc.titlePorous semiconductor compounds: obtaining and functionalization with metallic nanostructures for multifunctional applicationsen_US
dc.typeArticleen_US
dc.relation.conferenceInternational Colloquium "Physics of Materials"en_US
item.grantfulltextopen-
item.languageiso639-1other-
item.fulltextWith Fulltext-
crisitem.author.deptDepartment of Microelectronics and Biomedical Engineering-
crisitem.author.orcid0000-0003-3293-8645-
crisitem.author.parentorgFaculty of Computers, Informatics and Microelectronics-
crisitem.project.grantno20.80009.5007.20.-
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