Please use this identifier to cite or link to this item: http://cris.utm.md/handle/5014/1720
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dc.contributor.authorLUPAN, Cristianen_US
dc.contributor.authorBUZDUGAN, Arturen_US
dc.contributor.authorBÎRNAZ, Adrianen_US
dc.contributor.authorLUPAN, Olegen_US
dc.date.accessioned2023-08-23T07:37:43Z-
dc.date.available2023-08-23T07:37:43Z-
dc.date.issued2023-
dc.identifier.urihttp://cris.utm.md/handle/5014/1720-
dc.description.abstractIn this research project, the influence of ionizing radiation dose from a Cs-137 source on the electrical and sensory properties of metal-oxide semiconductor nanostructures (eg ZnO:Eu, ZnO:Fe, CuO, etc.) was studied. The resistance of the samples was measured in real time during irradiation at room temperature. Shortly after irradiation, the volt-ampere characteristics and sensor properties were measured in the temperature range from 20 °C to 350 °C. It was observed that the resistance practically did not change during irradiation, instead the sensory properties of some gases improved considerably.en_US
dc.subjectsemiconductor, nanostructuresen_US
dc.titleINFLUENCE OF THE IONIZING RADIATION ON THE ELECTRICAL AND SENSING PROPERTIES OF MOS NANOSTRUCTURESen_US
dc.typeAwarden_US
dc.relation.conferenceInventica 2023en_US
item.grantfulltextopen-
item.fulltextWith Fulltext-
crisitem.author.deptDepartment of Microelectronics and Biomedical Engineering-
crisitem.author.deptDepartment of Microelectronics and Biomedical Engineering-
crisitem.author.orcid0000-0002-7913-9712-
crisitem.author.parentorgFaculty of Computers, Informatics and Microelectronics-
crisitem.author.parentorgFaculty of Computers, Informatics and Microelectronics-
Appears in Collections:01-Gold Medals
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