Please use this identifier to cite or link to this item:
http://cris.utm.md/handle/5014/1720
DC Field | Value | Language |
---|---|---|
dc.contributor.author | LUPAN, Cristian | en_US |
dc.contributor.author | BUZDUGAN, Artur | en_US |
dc.contributor.author | BÎRNAZ, Adrian | en_US |
dc.contributor.author | LUPAN, Oleg | en_US |
dc.date.accessioned | 2023-08-23T07:37:43Z | - |
dc.date.available | 2023-08-23T07:37:43Z | - |
dc.date.issued | 2023 | - |
dc.identifier.uri | http://cris.utm.md/handle/5014/1720 | - |
dc.description.abstract | In this research project, the influence of ionizing radiation dose from a Cs-137 source on the electrical and sensory properties of metal-oxide semiconductor nanostructures (eg ZnO:Eu, ZnO:Fe, CuO, etc.) was studied. The resistance of the samples was measured in real time during irradiation at room temperature. Shortly after irradiation, the volt-ampere characteristics and sensor properties were measured in the temperature range from 20 °C to 350 °C. It was observed that the resistance practically did not change during irradiation, instead the sensory properties of some gases improved considerably. | en_US |
dc.subject | semiconductor, nanostructures | en_US |
dc.title | INFLUENCE OF THE IONIZING RADIATION ON THE ELECTRICAL AND SENSING PROPERTIES OF MOS NANOSTRUCTURES | en_US |
dc.type | Award | en_US |
dc.relation.conference | Inventica 2023 | en_US |
item.grantfulltext | open | - |
item.fulltext | With Fulltext | - |
crisitem.author.dept | Department of Microelectronics and Biomedical Engineering | - |
crisitem.author.dept | Department of Microelectronics and Biomedical Engineering | - |
crisitem.author.orcid | 0000-0002-7913-9712 | - |
crisitem.author.parentorg | Faculty of Computers, Informatics and Microelectronics | - |
crisitem.author.parentorg | Faculty of Computers, Informatics and Microelectronics | - |
Appears in Collections: | 01-Gold Medals |
Files in This Item:
File | Description | Size | Format | |
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Inventica_2023_Gold_Lupan C..pdf | 3.6 MB | Adobe PDF | View/Open |
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