Please use this identifier to cite or link to this item:
http://cris.utm.md/handle/5014/206
DC Field | Value | Language |
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dc.contributor.author | ZALAMAI, Victor | en_US |
dc.contributor.author | RUSU, Emil | en_US |
dc.contributor.author | SIRBU, Nicolae | en_US |
dc.contributor.author | TIRON, ANDREW | en_US |
dc.date.accessioned | 2020-03-19T17:45:22Z | - |
dc.date.available | 2020-03-19T17:45:22Z | - |
dc.date.issued | 2019-12-15 | - |
dc.identifier.issn | 0921-4526 | - |
dc.identifier.uri | http://cris.utm.md/handle/5014/206 | - |
dc.description.abstract | Reflection and absorption spectra of SnS single crystals (Pnma (D2h16) space group) were investigated at low and room temperatures. Features attributed to three excitonic states were found out. Parameters of excitons and bands were determined. The first excitonic states are formed at Γ-Y direction of Brillouin zone and have hole effective mass mV1* = 2.6m0 and electron effective mass mC1* = 1.3m0. The second excitonic states near X point in direction Γ-X and the third excitonic states in U point of Brillouin zone are formed. Excitonic transitions in U point are allowed in both polarizations and effective mass of holes in U point (mV1* = 3.46m0) is more than one at Γ-Y direction (mV1* = 2.6m0). Polarized transitions in reflection spectra of E||b and E⊥b polarizations in wide energy range of 1–6 eV were revealed. Optical functions (n, k, ε1 and ε2) for polarizations E||b and E⊥b in the wide energy range by Kramers-Kronig relations were calculated. | en_US |
dc.language.iso | en | en_US |
dc.relation.ispartof | PHYSICA B-CONDENSED MATTER | en_US |
dc.subject | absorption | en_US |
dc.subject | reflection and transmission spectra | en_US |
dc.subject | layered SnS crystals | en_US |
dc.subject | excitonic states | en_US |
dc.subject | electronic band structure | en_US |
dc.subject | effective masses of electrons and holes | en_US |
dc.title | Optical properties and electronic band structure of SnS single crystals | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1016/j.physb.2019.411712 | - |
item.grantfulltext | open | - |
item.languageiso639-1 | other | - |
item.fulltext | With Fulltext | - |
crisitem.author.dept | Department of Microelectronics and Biomedical Engineering | - |
crisitem.author.dept | Department of Telecommunications and Electronic Systems | - |
crisitem.author.orcid | 0000-0002-1882-2622 | - |
crisitem.author.orcid | 0000-0001-6800-8111 | - |
crisitem.author.parentorg | Faculty of Computers, Informatics and Microelectronics | - |
crisitem.author.parentorg | Faculty of Electronics and Telecommunications | - |
Appears in Collections: | Journal Articles |
Files in This Item:
File | Description | Size | Format | |
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Optical_properties_and_electronic_V.V_ZALAMAI.pdf | 30.08 kB | Adobe PDF | View/Open |
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