Please use this identifier to cite or link to this item: http://cris.utm.md/handle/5014/206
DC FieldValueLanguage
dc.contributor.authorZALAMAI, Victoren_US
dc.contributor.authorRUSU, Emilen_US
dc.contributor.authorSIRBU, Nicolaeen_US
dc.contributor.authorTIRON, ANDREWen_US
dc.date.accessioned2020-03-19T17:45:22Z-
dc.date.available2020-03-19T17:45:22Z-
dc.date.issued2019-12-15-
dc.identifier.issn0921-4526-
dc.identifier.urihttp://cris.utm.md/handle/5014/206-
dc.description.abstractReflection and absorption spectra of SnS single crystals (Pnma (D2h16) space group) were investigated at low and room temperatures. Features attributed to three excitonic states were found out. Parameters of excitons and bands were determined. The first excitonic states are formed at Γ-Y direction of Brillouin zone and have hole effective mass mV1* = 2.6m0 and electron effective mass mC1* = 1.3m0. The second excitonic states near X point in direction Γ-X and the third excitonic states in U point of Brillouin zone are formed. Excitonic transitions in U point are allowed in both polarizations and effective mass of holes in U point (mV1* = 3.46m0) is more than one at Γ-Y direction (mV1* = 2.6m0). Polarized transitions in reflection spectra of E||b and E⊥b polarizations in wide energy range of 1–6 eV were revealed. Optical functions (n, k, ε1 and ε2) for polarizations E||b and E⊥b in the wide energy range by Kramers-Kronig relations were calculated.en_US
dc.language.isoenen_US
dc.relation.ispartofPHYSICA B-CONDENSED MATTERen_US
dc.subjectabsorptionen_US
dc.subjectreflection and transmission spectraen_US
dc.subjectlayered SnS crystalsen_US
dc.subjectexcitonic statesen_US
dc.subjectelectronic band structureen_US
dc.subjecteffective masses of electrons and holesen_US
dc.titleOptical properties and electronic band structure of SnS single crystalsen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.physb.2019.411712-
item.grantfulltextopen-
item.languageiso639-1other-
item.fulltextWith Fulltext-
crisitem.author.deptDepartment of Microelectronics and Biomedical Engineering-
crisitem.author.deptDepartment of Telecommunications and Electronic Systems-
crisitem.author.orcid0000-0002-1882-2622-
crisitem.author.orcid0000-0001-6800-8111-
crisitem.author.parentorgFaculty of Computers, Informatics and Microelectronics-
crisitem.author.parentorgFaculty of Electronics and Telecommunications-
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