FABRICATION OF DIAMETER MODULATED GALLIUM ARSENIDE NANOWIRES VIA ANODIZATION

Abstract

In this paper, the technological approach for diameter modulated GaAs nanowires fabrication via electrochemical etching representing simple and cost-effective technology is demonstrated. At optimized applied potential, in the same technological process, the growth of GaAs nanowires oriented perpendicular to the crystal surface occurs. At the same time, simultaneously growing tilted pores penetrate the nanowires resulting in modulation of nanowires along the whole length. In 40 min of anodization the as long as 200 µm nanowires were obtained. A selective modulation of nanowires via anodization at two different applied potentials is demonstrated. The tree-dimensional modulation of diameter will give the possibility to increase the area of their applications.