Please use this identifier to cite or link to this item: http://cris.utm.md/handle/5014/2511
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dc.contributor.authorMONAICO, Eduard V.en_US
dc.contributor.authorMONAICO, Elena I.en_US
dc.contributor.authorURSAKI, Veaceslaven_US
dc.contributor.authorTIGINYANU, Ionen_US
dc.date.accessioned2024-01-03T14:37:57Z-
dc.date.available2024-01-03T14:37:57Z-
dc.date.issued2023-
dc.identifier.urihttp://cris.utm.md/handle/5014/2511-
dc.description.abstractInvenţia se referă la tehnologia de producere a materialelor nanostructurate, în particular la procedee de obţinere a nanostructurilor prin tratare electrochimică. Procedeul, conform invenţiei, include executarea unui contact electric din pastă de argint pe o plachetă de n-GaAs cu orientarea cristalografică (111)B, instalarea plachetei pe un O-inel într-o celulă de Teflon şi anodizarea acesteia întrun electrolit ce conține soluție de 1M HNO3, la temperatura camerei timp de 20 min, în regim potenţiostatic cu aplicarea tensiunii de 3,0-4,5 V.en_US
dc.relation.ispartofseriesMD 4840;-
dc.subjectmateriale nanostructurate, tratare electrochimicăen_US
dc.titleProcedeu de obţinere a nanofirelor de arseniură de galiuen_US
dc.typePatenten_US
item.grantfulltextopen-
item.fulltextWith Fulltext-
crisitem.author.deptDepartment of Microelectronics and Biomedical Engineering-
crisitem.author.deptDepartment of Microelectronics and Biomedical Engineering-
crisitem.author.orcid0000-0003-3293-8645-
crisitem.author.orcid0000-0003-4488-850X-
crisitem.author.orcid0000-0003-0893-0854-
crisitem.author.parentorgFaculty of Computers, Informatics and Microelectronics-
crisitem.author.parentorgFaculty of Computers, Informatics and Microelectronics-
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