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Please use this identifier to cite or link to this item: http://cris.utm.md/handle/5014/499
DC FieldValueLanguage
dc.contributor.authorMUNTYANU, Fiodoren_US
dc.contributor.authorNENKOV, Konstantinen_US
dc.contributor.authorZALESKI, Andrzejen_US
dc.contributor.authorCHISTOL, Vitalieen_US
dc.date.accessioned2020-05-24T09:37:37Z-
dc.date.available2020-05-24T09:37:37Z-
dc.date.issued2020-
dc.identifier.citationMuntyanu F.M., Nenkov K., Zaleski A.J., Chistol V. (2020) Superconductivity and Weak Ferromagnetism in Inclination Bicrystal Interfaces of Bismuth and Antimony. In: Tiginyanu I., Sontea V., Railean S. (eds) 4th International Conference on Nanotechnologies and Biomedical Engineering. ICNBME 2019. IFMBE Proceedings, vol 77. Springer, Chamen_US
dc.identifier.isbn978-3-030-31866-6-
dc.identifier.isbn978-3-030-31865-9-
dc.identifier.issn1680-0737-
dc.identifier.urihttp://cris.utm.md/handle/5014/499-
dc.description.abstractUsing Quantum Design SQUID magnetometer and Physical Property Measuring System (PPMS), we studied the magnetic and superconducting properties of high-quality inclination crystallite interfaces (CIs) of bicrystals of Sb and Bi. It was found that the CIs with a higher carrier density than single crystalline samples exhibit a superconducting transition with respectively Tc ≤ 10 K for Sb and Tc ≤ 21 K for Bi interfaces; the Sb CIs also manifest ferromagnetic hysteresis loops against a paramagnetic background, thereby indicating occurrence of superconductivity and weak ferromagnetism.en_US
dc.language.isoenen_US
dc.publisherSpringer, Chamen_US
dc.relation.ispartofIFMBE Proceedingsen_US
dc.subjectantimonyen_US
dc.subjectbismuthen_US
dc.subjectbicrystal interfaceen_US
dc.subjectsuperconductivity and ferromagnetismen_US
dc.titleSuperconductivity and weak ferromagnetism in inclination bicrystal interfaces of bismuth and antimonyen_US
dc.typeArticleen_US
dc.identifier.doi10.1007/978-3-030-31866-6_4-
dc.identifier.scopus2-s2.0-85075596503-
item.languageiso639-1other-
item.grantfulltextopen-
item.fulltextWith Fulltext-
crisitem.author.deptDepartment of Physics-
crisitem.author.parentorgFaculty of Electronics and Telecommunications-
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