Please use this identifier to cite or link to this item:
http://cris.utm.md/handle/5014/541
DC Field | Value | Language |
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dc.contributor.author | MONAICO, Elena | en_US |
dc.contributor.author | MONAICO, Eduard | en_US |
dc.contributor.author | URSAKI, Veaceslav | en_US |
dc.contributor.author | HONNALI, Shashank | en_US |
dc.contributor.author | POSTOLACHE, Vitalie | en_US |
dc.contributor.author | LEISTNER, K. | en_US |
dc.contributor.author | NIELSCH, Kornelius | en_US |
dc.contributor.author | TIGINYANU, Ion | en_US |
dc.date.accessioned | 2020-07-06T13:09:55Z | - |
dc.date.available | 2020-07-06T13:09:55Z | - |
dc.date.issued | 2020 | - |
dc.identifier.uri | http://cris.utm.md/handle/5014/541 | - |
dc.description.abstract | A comparative study of the anodization processes occurring at the GaAs(111)A and GaAs(111)B surfaces exposed to electrochemical etching in neutral NaCl and acidic HNO3 aqueous electrolytes is performed in galvanostatic and potentiostatic anodization modes. Anodization in NaCl electrolytes was found to result in the formation of porous structures with porosity controlled either by current under the galvanostatic anodization, or by the potential under the potentiostatic anodization. Possibilities to produce multilayer porous structures are demonstrated. At the same time, one-step anodization in a HNO3 electrolyte is shown to lead to the formation of GaAs triangular shape nanowires with high aspect ratio (400 nm in diameter and 100 µm in length). The new data are compared to those previously obtained through anodizing GaAs(100) wafers in alkaline KOH electrolyte. An IR photodetector based on the GaAs nanowires is demonstrated. | en_US |
dc.language.iso | en | en_US |
dc.relation | NanoMedTwin - Promoting smart specialization at the Technical University of Moldova by developing the field of Novel Nanomaterials for BioMedical Applications through excellence in research and twinning | en_US |
dc.relation | 19.80013.50.07.03A/BL. A3B5 porous semiconductor compounds and perovskites for photonic and microelectronic structures / Compuşi semiconductori poroşi A3B5 şi perovskite pentru structuri fotonice şi microelectronice | en_US |
dc.relation.ispartof | Beilstein Journal of Nanotechnology | en_US |
dc.subject | anodization | en_US |
dc.subject | crystallographically oriented pores | en_US |
dc.subject | gallium arsenide (GaAs) | en_US |
dc.subject | nanowires | en_US |
dc.subject | neutral electrolyte | en_US |
dc.subject | photocurrent | en_US |
dc.subject | porous GaAs | en_US |
dc.title | Electrochemical nanostructuring of (111) oriented GaAs crystals: from porous structures to nanowires | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.3762/bjnano.11.81 | - |
item.grantfulltext | open | - |
item.fulltext | With Fulltext | - |
item.languageiso639-1 | other | - |
crisitem.project.grantno | 810652 | - |
crisitem.project.grantno | 19.80013.50.07.03A/BL | - |
crisitem.project.projectURL | http://nanomedtwin.eu/ | - |
crisitem.project.fundingProgram | H2020-EU.4.b. | - |
crisitem.author.dept | Department of Microelectronics and Biomedical Engineering | - |
crisitem.author.dept | Department of Microelectronics and Biomedical Engineering | - |
crisitem.author.orcid | 0000-0003-3293-8645 | - |
crisitem.author.orcid | 0000-0003-4488-850X | - |
crisitem.author.orcid | 0000-0003-0893-0854 | - |
crisitem.author.parentorg | Faculty of Computers, Informatics and Microelectronics | - |
crisitem.author.parentorg | Faculty of Computers, Informatics and Microelectronics | - |
Appears in Collections: | Journal Articles |
Files in This Item:
File | Description | Size | Format | |
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Monaico_Electrochemical_nanostructuring_compressed.pdf | 456.83 kB | Adobe PDF | View/Open |
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