Please use this identifier to cite or link to this item: http://cris.utm.md/handle/5014/591
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dc.contributor.authorCASIAN, Anatolieen_US
dc.contributor.authorSANDULEAC, Ionelen_US
dc.date.accessioned2020-09-25T06:48:55Z-
dc.date.available2020-09-25T06:48:55Z-
dc.date.issued2020-09-15-
dc.identifier.citationCASIAN, Anatolie, & SANDULEAC, Ionel. (2020). DENSITY OF STATES FOR AN ELECTRONIC SPECTRUM WITH A FORBIDDEN BAND. Journal of Engineering Science, XXVII (3), 33–37. http://doi.org/10.5281/zenodo.3949645en_US
dc.identifier.issn2587-3474-
dc.identifier.issn2587-3482-
dc.identifier.urihttp://cris.utm.md/handle/5014/591-
dc.description.abstractQuasi-one-dimensional organic crystals with high electrical conductivity at room temperature are prospect materials for thermoelectric applications. However, usually at some low temperature these materials manifest metal-dielectric transition of Peierls type. The aim of this paper is to calculate the density of electronic states and to show that the metal-dielectric transition is determined by the appearance of a forbidden band in the electronic spectrum exactly above the Fermi energy. While decreasing the temperature T, this forbidden band becomes larger and at some T prevails the value of k0T, where k0 is the Boltzmann constant and the carriers cannot be exited across the forbidden band. This temperature corresponds to metal-dielectric transition.en_US
dc.language.isoenen_US
dc.relation.ispartofJournal of Engineering Scienceen_US
dc.subjectelectrical conductivityen_US
dc.subjectquasi-one-dimensional materialsen_US
dc.subjectorganic compoundsen_US
dc.subjectthermoelectric figure of meriten_US
dc.subjectthermoelectric converteren_US
dc.titleDENSITY OF STATES FOR AN ELECTRONIC SPECTRUM WITH A FORBIDDEN BANDen_US
dc.typeArticleen_US
dc.identifier.doi10.5281/zenodo.3949645-
item.grantfulltextopen-
item.languageiso639-1other-
item.fulltextWith Fulltext-
crisitem.author.deptDepartment of Physics-
crisitem.author.orcid0000-0003-0578-2534-
crisitem.author.orcid0000-0001-7532-1288-
crisitem.author.parentorgFaculty of Electronics and Telecommunications-
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