Please use this identifier to cite or link to this item: http://cris.utm.md/handle/5014/617
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dc.contributor.authorSPRINCEAN, Veaceslaven_US
dc.contributor.authorLUPAN, Olegen_US
dc.contributor.authorCARAMAN, Iulianaen_US
dc.contributor.authorUNTILA, Dumitruen_US
dc.contributor.authorPOSTICA, Vasileen_US
dc.contributor.authorCOJOCARU, Alaen_US
dc.contributor.authorGAPEEVA, Annaen_US
dc.contributor.authorPALACHI, Leoniden_US
dc.contributor.authorADELUNG, Raineren_US
dc.contributor.authorTIGINYANU, Ionen_US
dc.contributor.authorCARAMAN, Mihailen_US
dc.date.accessioned2020-10-05T09:54:07Z-
dc.date.available2020-10-05T09:54:07Z-
dc.date.issued2021-
dc.identifier.citationSprincean, V., Lupan, O., Caraman, I., Untila, D., Postica, V., Cojocaru, A., Gapeeva, A., Palachi, L., Adeling, R., Tiginyanu, I., Caraman, M., 2021. Crystallinity and optical properties of β-Ga2O3/Ga2S3 layered structure obtained by thermal annealing of Ga2S3 semiconductor. Materials Science in Semiconductor Processing.. doi:10.1016/j.mssp.2020.105314en_US
dc.identifier.urihttp://cris.utm.md/handle/5014/617-
dc.description.abstractIn this work, the β-Ga2O3 nanostructures were obtained by thermal annealing in air of β-Ga2S3 single crystals at relatively high temperatures of 970 K, 1070 K and 1170 K for 6 h. The structural, morphological, chemical and optical properties of β-Ga2O3–β-Ga2S3 layered composites grown at different temperatures were investigated by means of X-ray diffraction (XRD), scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDX) as well as photoluminescence spectroscopy (PL) and Raman spectroscopy. The results show that the properties of obtained β-Ga2O3–β-Ga2S3 composites were strongly influenced by the thermal annealing temperature. The XRD and Raman analyses confirmed the high crystalline quality of the formed β-Ga2O3 nanostructures. The absorption edge of the oxide is due to direct optical transitions. The optical bandwidth was estimated to be approximately 4.34-4.41 eV, depending on the annealing temperature. Annealing of the β-Ga2S3 monocrystals at a higher temperature of 1170 K showed the complete conversion of the surface to β-Ga2O3. These results demonstrate the possibility to grow high quality β-Ga2O3–β-Ga2S3 layered composites and β-Ga2O3 nanostructures in large quantities for various applications such as gas sensing, non-toxic biomedical imaging, nonlinear optical, as well as power device applications. Micro and nanocrystallites present on the surface of the Ga2O3 layer contribute to a diffusion of the incident light which leads to an increase of the absorption rate allowing thus to reduce the thickness of the Ga2O3 layer, in which the generation of unbalanced charge carriers takes place. By decreasing the Ga2O3 layer thickness in such layered composites, the efficiency of photovoltaic cells based on such junctions can be increased.en_US
dc.language.isoenen_US
dc.relation15.817.02.34A.en_US
dc.relationNanoMedTwin - Promoting smart specialization at the Technical University of Moldova by developing the field of Novel Nanomaterials for BioMedical Applications through excellence in research and twinningen_US
dc.relation20.80009.5007.09. Elaborarea şi lansarea seriei de nanosateliţi cu misiuni de cercetare de pe Staţia Spaţială Internaţională, monitorizarea, postoperarea lor şi promovarea tehnologiilor spaţialeen_US
dc.relation.ispartofMaterials Science in Semiconductor Processingen_US
dc.subjectGallium oxideen_US
dc.subjectβ-Ga2O3/Ga2S3en_US
dc.subjectCrystalline β-Ga2S3en_US
dc.subjectSemiconductoren_US
dc.subjectScanning electron microscopyen_US
dc.titleCrystallinity and optical properties of β-Ga2O3/Ga2S3 layered structure obtained by thermal annealing of Ga2S3 semiconductoren_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.mssp.2020.105314-
item.grantfulltextopen-
item.fulltextWith Fulltext-
item.languageiso639-1other-
crisitem.project.grantno810652-
crisitem.project.grantno20.80009.5007.09-
crisitem.project.projectURLhttp://nanomedtwin.eu/-
crisitem.project.fundingProgramH2020-EU.4.b.-
crisitem.project.fundingProgramState Programme-
crisitem.author.deptDepartment of Microelectronics and Biomedical Engineering-
crisitem.author.deptDepartment of Microelectronics and Biomedical Engineering-
crisitem.author.deptDepartment of Microelectronics and Biomedical Engineering-
crisitem.author.orcid0000-0002-7913-9712-
crisitem.author.orcid0000-0003-3494-2349-
crisitem.author.orcid0000-0003-0893-0854-
crisitem.author.parentorgFaculty of Computers, Informatics and Microelectronics-
crisitem.author.parentorgFaculty of Computers, Informatics and Microelectronics-
crisitem.author.parentorgFaculty of Computers, Informatics and Microelectronics-
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