1. DSpace-CRIS UTM
  2. Research outputs
  3. 03-Awards
  4. 01-Gold Medals
Please use this identifier to cite or link to this item: http://cris.utm.md/handle/5014/668
DC FieldValueLanguage
dc.contributor.authorLUPAN, Cristianen_US
dc.contributor.authorTROFIM, Viorelen_US
dc.date.accessioned2020-12-30T15:12:37Z-
dc.date.available2020-12-30T15:12:37Z-
dc.date.issued2020-
dc.identifier.urihttp://cris.utm.md/handle/5014/668-
dc.description.abstractThe invention relates to the technology for deposition of semiconductor oxide films, in particular to the process of obtaining of ZnO:Eu3+ films, with application of rapid thermal annealing (T=650 °C, t=60s), with can be applied to the manufacture of gas sensors obtaining sensibility S=I_gas/I_air =1.3 for 100 ppm H2 gas at room temperature and S=I_gas/I_air =118 at operating temperature of 250 oC.en_US
dc.titleZnO:Eu FILMS FUNCTIONALIZED WITH Pd FOR ROOM TEMPERATURE H2 SENSORSen_US
dc.typeAwarden_US
dc.relation.conferenceInventCor 2020en_US
item.grantfulltextopen-
item.fulltextWith Fulltext-
crisitem.author.deptDepartment of Microelectronics and Biomedical Engineering-
crisitem.author.orcid0000-0002-6620-3076-
crisitem.author.parentorgFaculty of Computers, Informatics and Microelectronics-
Appears in Collections:01-Gold Medals
Files in This Item:
File Description SizeFormat
Diplome UTM 5.pdf1.54 MBAdobe PDFView/Open
ZnO.pdf431.26 kBAdobe PDFView/Open
Show simple item record

Google ScholarTM

Check


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.