Please use this identifier to cite or link to this item: http://cris.utm.md/handle/5014/840
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dc.contributor.authorMAGARIU, Nicolaeen_US
dc.contributor.authorTROFIM, Viorelen_US
dc.contributor.authorLUPAN, Olegen_US
dc.date.accessioned2021-10-11T13:58:53Z-
dc.date.available2021-10-11T13:58:53Z-
dc.date.issued2021-
dc.identifier.urihttp://cris.utm.md/handle/5014/840-
dc.description.abstractThe invention relates to the technique and technology of oxide semiconductors, in particular to butanol sensors based on ZnO-Al2O3 heteronjunctions. Butanol is widely used as a solvent for the manufacture of varnishes and paints. For butanol, the odor threshold is at 14-16 ppm, but the permissible limit of its concen-tration in air ≈ 3.3 ppm. For these reasons it is necessary to make sensors sensitive to low concentrations of butanol. The pro¬blem solved by the proposed invention is the manufacture of an n-Butanol sensor with a higher sensitivity to low gas concentrations.en_US
dc.language.isoenen_US
dc.subjectsemiconductors, butanolen_US
dc.titlen-BUTANOL SENSOR BASED ON ZnO-Al2O3 HETEROJUNCTIONen_US
dc.typeAwarden_US
dc.relation.conferenceEuroinvent 2021en_US
item.languageiso639-1other-
item.grantfulltextopen-
item.fulltextWith Fulltext-
crisitem.author.deptDepartment of Microelectronics and Biomedical Engineering-
crisitem.author.deptDepartment of Microelectronics and Biomedical Engineering-
crisitem.author.deptDepartment of Microelectronics and Biomedical Engineering-
crisitem.author.orcid0000-0002-6620-3076-
crisitem.author.orcid0000-0002-7913-9712-
crisitem.author.parentorgFaculty of Computers, Informatics and Microelectronics-
crisitem.author.parentorgFaculty of Computers, Informatics and Microelectronics-
crisitem.author.parentorgFaculty of Computers, Informatics and Microelectronics-
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