Please use this identifier to cite or link to this item: http://cris.utm.md/handle/5014/1170
Title: Involvement of Contact and Surface Phenomena in Nanolayered Amorphous Te Films for Toxic Gas Detection at Room Temperature
Authors: TSIULYANU, Dumitru 
MOCREAC, Olga 
BRANISTE, Tudor 
Keywords: a-Te;Contacts;Gas sorption;Nanolayers
Issue Date: 2022
Publisher: Springer
Source: Tsiulyanu D., Mocreac O., Braniste T. (2022) Involvement of Contact and Surface Phenomena in Nanolayered Amorphous Te Films for Toxic Gas Detection at Room Temperature. In: Tiginyanu I., Sontea V., Railean S. (eds) 5th International Conference on Nanotechnologies and Biomedical Engineering. ICNBME 2021. IFMBE Proceedings, vol 87. Springer, Cham.pp. 560-567. https://doi.org/10.1007/978-3-030-92328-0_72
Project: 20.80009.5007.21. Calcogenuri sticloase cu reţele spaţiale autoorganizate pentru bioinginerie 
Conference: ICNBME 2021
Abstract: 
A fast responding NO2 sensitive device operating at room temperature has been realized using the nanolayered amorphous Te (a-Te) grown onto insulating wafer of silicon dioxide (SiO2) between Pt contact electrodes with larger thickness in a planar arrangement. The structure of the fabricated sensor has been investigated by AFM and SEM but its characterization was realized via studying the current - voltage characteristics, dynamic response, long – term stability and effect of humidity. Explanation of obtained results is given in terms of a model based on simultaneous involvement of contact and surface phenomena for the gas sensing. As the Pt electrode work function (5.43 eV) exceeds the respective value of a-Te (5.03 eV) the ohmic contacts are formed and the current flow is controlled exclusively by bulk resistance of a-Te nanolayer that is known to be controlled by type and concentration of toxic gas of the ambiance. Wherein, as the energetic forbidden gap of a-Te (0.33 eV) is less than the work function difference between contacting materials, at the contacts can arise the degenerate regions of p-type metallic Te, as well as geometric contact gaps originated from microscopically roughness. The gas adsorption inside these contacts gaps leads to increasing the portion of the semiconducting a-Te nanolayer turned into metal of p-type Te and consequently to a fast increasing of the current.
Description: 
pp 560-567
URI: http://cris.utm.md/handle/5014/1170
DOI: 10.1007/978-3-030-92328-0_72
Appears in Collections:Journal Articles

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