Please use this identifier to cite or link to this item: http://cris.utm.md/handle/5014/1461
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dc.contributor.authorMONAICO, Eduard V.en_US
dc.contributor.authorURSAKI, Veaceslaven_US
dc.contributor.authorTIGINYANU, Ionen_US
dc.date.accessioned2022-11-04T08:54:25Z-
dc.date.available2022-11-04T08:54:25Z-
dc.date.issued2022-
dc.identifier.urihttp://cris.utm.md/handle/5014/1461-
dc.description.abstractPropunem fabricarea heterostructurilor din nanofire semiconductoare cu banda interiză largă (Eg) (de exemplu din Ga2O3 cu Eg = 4,9 eV, sau In2O3 cu Eg ~ 3 eV) pe suport semiconductor cu banda interiză îngustă cu conductivitate termică bună () (GaAs cu Eg = 1,44 eV și  = 52 W/m•K sau InP cu Eg = 1,34 și = 68 W/m•K). Procesul tehnologic constă din 2 pași: (i) anodizarea substratelor semiconductoare cu formarea nanofirelor, (ii) tratamentul termic la parametri optimizați ce asigură oxidarea selectiva doar a nanofirelor.en_US
dc.subjectHeterostructuri, semiconductori, tratament termicen_US
dc.titleProcess for obtaining heterostructures with wide-bandgap nanowires on narrow-bandgap semiconductor substrateen_US
dc.typeAwarden_US
dc.relation.conferenceInventica 2022en_US
item.grantfulltextopen-
item.fulltextWith Fulltext-
crisitem.author.deptDepartment of Microelectronics and Biomedical Engineering-
crisitem.author.deptDepartment of Microelectronics and Biomedical Engineering-
crisitem.author.orcid0000-0003-3293-8645-
crisitem.author.orcid0000-0003-4488-850X-
crisitem.author.orcid0000-0003-0893-0854-
crisitem.author.parentorgFaculty of Computers, Informatics and Microelectronics-
crisitem.author.parentorgFaculty of Computers, Informatics and Microelectronics-
Appears in Collections:01-Gold Medals
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