Please use this identifier to cite or link to this item: http://cris.utm.md/handle/5014/152
DC FieldValueLanguage
dc.contributor.authorZALAMAI, Victoren_US
dc.contributor.authorTIRON, Andreien_US
dc.contributor.authorRUSU, Emilen_US
dc.contributor.authorSIRBU, Nicolaeen_US
dc.date.accessioned2020-03-11T16:30:23Z-
dc.date.available2020-03-11T16:30:23Z-
dc.date.issued2019-12-18-
dc.identifier.citationTY - JOUR AU - Zalamai, Victor AU - Tiron, Andrew AU - Rusu, Emil AU - Syrbu, Nicolai PY - 2019/12/06 SP - T1 - Birefringence of SnSe single crystals in excitonic and electronic transitions region VL - 6 DO - 10.1088/2053-1591/ab5f8a JO - Materials Research Express ER -en_US
dc.identifier.urihttp://cris.utm.md/handle/5014/152-
dc.description.abstractAbsorption spectra in temperature range 300–10 K were studied. The minimal band gap A 1 (1.091 eV at 300 K) is formed by direct allowed in Emidmidc polarization and forbidden in Emidmida polarizations transitions. The next interval B 1 (1.316 eV) is formed by direct transitions allowed in Emidmida polarization and forbidden in Emidmidc polarization. Angular dependences of the electron transitions in the band gap minimum were investigated. Spectral dependences of refractive index ( n ) were calculated from wavelength modulation transmission ( ΔT/Δλ ) and reflection ( ΔR/Δλ ) spectra in the region of direct electron transitions. The absorption edge shifts to higher energies with temperature decreasing, and temperature coefficient of edge absorption shift (β) is 3.4 × 10−3 eV K−1.en_US
dc.language.isoenen_US
dc.relation.ispartofMATERIALS RESEARCH EXPRESSen_US
dc.titleBirefringence of SnSe single crystals in excitonic and electronic transitions regionen_US
dc.typeArticleen_US
dc.identifier.doi10.1088/2053-1591/ab5f8a-
item.grantfulltextopen-
item.languageiso639-1other-
item.fulltextWith Fulltext-
crisitem.author.deptDepartment of Microelectronics and Biomedical Engineering-
crisitem.author.deptDepartment of Telecommunications and Electronic Systems-
crisitem.author.orcid0000-0002-1882-2622-
crisitem.author.orcid0000-0001-6800-8111-
crisitem.author.parentorgFaculty of Computers, Informatics and Microelectronics-
crisitem.author.parentorgFaculty of Electronics and Telecommunications-
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