Please use this identifier to cite or link to this item:
http://cris.utm.md/handle/5014/217
DC Field | Value | Language |
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dc.contributor.author | ZALAMAI, Victor | en_US |
dc.contributor.author | TIRON, Andrei | en_US |
dc.contributor.author | RUSU, Emil | en_US |
dc.contributor.author | MONAICO, Eduard | en_US |
dc.contributor.author | SIRBU, Nicolae | en_US |
dc.date.accessioned | 2020-03-21T11:16:46Z | - |
dc.date.available | 2020-03-21T11:16:46Z | - |
dc.date.issued | 2020 | - |
dc.identifier.citation | Zalamai V.V., Tiron A.V., Rusu E.V., Monaico E.V., Syrbu N.N. (2020) Near-Edge Optical Properties of Layered Tin Sulfide (Selenide) Crystals. In: Tiginyanu I., Sontea V., Railean S. (eds) 4th International Conference on Nanotechnologies and Biomedical Engineering. ICNBME 2019. IFMBE Proceedings, vol 77. Springer, Cham | en_US |
dc.identifier.isbn | 978-3-030-31865-9 | - |
dc.identifier.isbn | 978-3-030-31866-6 | - |
dc.identifier.uri | http://cris.utm.md/handle/5014/217 | - |
dc.description.abstract | Absorption (K), reflection (R) and wavelength modulated transmission (ΔT/Δλ) spectra in SnS, SnS2 and SnSe crystals were investigated in temperature range from 300 to 10 K. Excitonic states were discovered in all investigated compounds. Parameters of observed excitons and character of electron transitions participating in absorption edge formation were determined. Optical anisotropy in interband gap minimum was investigated. | en_US |
dc.description.sponsorship | National Agency for Research and Development | en_US |
dc.description.sponsorship | Alexander von Humboldt Foundation | en_US |
dc.language.iso | en | en_US |
dc.relation | 15.817.02.29A. Multifunctional nanomaterials and nanoelectronic devices based on nitrides, oxides and chalcogenides for biomedicine / Nanomateriale multifuncţionale şi dispozitive nanoelectronice în bază de nitruri, oxizi şi calcogenuri pentru biomedicină | en_US |
dc.relation | 15.817.02.08A | en_US |
dc.relation | 15.817.02.32A. The study of semiconductor materials and elaboration micro-optoelectronic devices for advanced applications / Studiul materialelor semiconductoare şi elaborarea dispozitivelor micro-optoelectronice pentru aplicaţii avansate. | en_US |
dc.relation.ispartof | IFMBE Proceedings | en_US |
dc.subject | optical spectroscopy | en_US |
dc.subject | absorption spectra | en_US |
dc.subject | electron transitions | en_US |
dc.subject | direct transitions | en_US |
dc.title | Near-Edge Optical Properties of Layered Tin Sulfide (Selenide) Crystals | en_US |
dc.type | Article | en_US |
dc.relation.conference | ICNBME-2019 | en_US |
dc.identifier.doi | 10.1007/978-3-030-31866-6_25 | - |
dc.identifier.scopus | 2-s2.0-85075596478 | - |
item.fulltext | With Fulltext | - |
item.grantfulltext | open | - |
item.languageiso639-1 | other | - |
crisitem.author.dept | Department of Microelectronics and Biomedical Engineering | - |
crisitem.author.dept | Department of Microelectronics and Biomedical Engineering | - |
crisitem.author.dept | Department of Telecommunications and Electronic Systems | - |
crisitem.author.orcid | 0000-0002-1882-2622 | - |
crisitem.author.orcid | 0000-0003-3293-8645 | - |
crisitem.author.orcid | 0000-0001-6800-8111 | - |
crisitem.author.parentorg | Faculty of Computers, Informatics and Microelectronics | - |
crisitem.author.parentorg | Faculty of Computers, Informatics and Microelectronics | - |
crisitem.author.parentorg | Faculty of Electronics and Telecommunications | - |
crisitem.project.grantno | 15.817.02.29A | - |
crisitem.project.grantno | 15.817.02.32A | - |
Appears in Collections: | Proceedings Papers |
Files in This Item:
File | Description | Size | Format | |
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Near-Edge_Optical_Properties_ZALAMAI_V.V..pdf | 26.63 kB | Adobe PDF | View/Open |
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