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Please use this identifier to cite or link to this item: http://cris.utm.md/handle/5014/2281
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dc.contributor.authorMONAICO, Elena I.en_US
dc.date.accessioned2023-12-14T13:22:01Z-
dc.date.available2023-12-14T13:22:01Z-
dc.date.issued2022-
dc.identifier.citationMONAICO, E.I. Diameter modulated GaAs nanowire arrays via crossing crystallographic pores. In: Abstract Book Posters Session Papers of The 7th International Colloquium “Physics of Materials” (PM-7), 10 — 11 November 2022, Bucharest, Romania. Disponibil: http://www.physics.pub.ro/Site_Conferinta_PM-7/POSTER_SESSION_PAPERS.pdf P.4.en_US
dc.identifier.urihttp://www.physics.pub.ro/Site_Conferinta_PM-7/POSTER_SESSION_PAPERS.pdf P.4.-
dc.identifier.urihttp://cris.utm.md/handle/5014/2281-
dc.description.abstractThe morphologies and properties of the produced porous semiconductor materials are determined by the mechanisms of the pore growth during electrochemical etching of the bulk semiconductor wafers [1]. Depending on the mechanism of growth, pores with different characteristics are formed in terms of their shape, velocity of growth, etc. On the other hand, the pore growing mechanism depends on the characteristics of the initial bulk semiconductor material and the specific anodizing conditions [2,3].en_US
dc.language.isoenen_US
dc.titleDiameter modulated GaAs nanowire arrays via crossing crystallographic poresen_US
dc.typeArticleen_US
dc.relation.conferencePhysics of Materialsen_US
item.languageiso639-1other-
item.grantfulltextopen-
item.fulltextWith Fulltext-
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