CRIS of TUM
Current Research Information System (CRIS) of the Technical University of Moldova (TUM) is an open access system gathering information and digital material relating to the various research and innovation entities and activities of TUM: researchers, research units, publications, patents, thesis, awards, events, equipment, services and other.
Please use this identifier to cite or link to this item:
http://cris.utm.md/handle/5014/2281| Title: | Diameter modulated GaAs nanowire arrays via crossing crystallographic pores | Authors: | MONAICO, Elena I. | Issue Date: | 2022 | Source: | MONAICO, E.I. Diameter modulated GaAs nanowire arrays via crossing crystallographic pores. In: Abstract Book Posters Session Papers of The 7th International Colloquium “Physics of Materials” (PM-7), 10 — 11 November 2022, Bucharest, Romania. Disponibil: http://www.physics.pub.ro/Site_Conferinta_PM-7/POSTER_SESSION_PAPERS.pdf P.4. | Conference: | Physics of Materials | Abstract: | The morphologies and properties of the produced porous semiconductor materials are determined by the mechanisms of the pore growth during electrochemical etching of the bulk semiconductor wafers [1]. Depending on the mechanism of growth, pores with different characteristics are formed in terms of their shape, velocity of growth, etc. On the other hand, the pore growing mechanism depends on the characteristics of the initial bulk semiconductor material and the specific anodizing conditions [2,3]. |
URI: | http://www.physics.pub.ro/Site_Conferinta_PM-7/POSTER_SESSION_PAPERS.pdf P.4. http://cris.utm.md/handle/5014/2281 |
| Appears in Collections: | Conference Abstracts |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| PROGRAM-PM_7_Nov_2_38-38.pdf | 131.93 kB | Adobe PDF | View/Open |
Google ScholarTM
Check
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.