Please use this identifier to cite or link to this item: http://cris.utm.md/handle/5014/482
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dc.contributor.authorTIRON, Andreien_US
dc.date.accessioned2020-05-22T11:53:05Z-
dc.date.available2020-05-22T11:53:05Z-
dc.date.issued2020-
dc.identifier.citationTiron A.V. (2020) Refractive Index in the Region of Excitonic Resonances in TlGaSe2 Crystals. In: Tiginyanu I., Sontea V., Railean S. (eds) 4th International Conference on Nanotechnologies and Biomedical Engineering. ICNBME 2019. IFMBE Proceedings, vol 77. Springer, Chamen_US
dc.identifier.isbn978-303031865-9-
dc.identifier.isbn978-3-030-31866-6-
dc.identifier.issn1680-0737-
dc.identifier.urihttp://cris.utm.md/handle/5014/482-
dc.description.abstractThe low-temperature transmission and wavelength modulated transmission spectra of TlGaSe2 crystals with a thickness of 7, 5.7, 4.7 μm were measured. Refractive index was calculated from interference observed in transmission spectra. The spectral dependences of the normal dispersion na (E║a) and nв (E║в) and Δn = na (E║a) − nв (E║в) on the long-wavelength and short-wave side of the ground states A, B and C of excitons are determined.en_US
dc.language.isoenen_US
dc.publisherSpringeren_US
dc.relation.ispartofIFMBE Proceedingsen_US
dc.subjectchalcogenideen_US
dc.subjectoptical spectroscopyen_US
dc.subjectrefractive indexen_US
dc.titleRefractive index in the region of excitonic resonances in TLGase2 Crystalsen_US
dc.typeArticleen_US
dc.identifier.doi10.1007/978-3-030-31866-6_16-
dc.identifier.scopus2-s2.0-85075604705-
item.grantfulltextopen-
item.languageiso639-1other-
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