Please use this identifier to cite or link to this item: http://cris.utm.md/handle/5014/619
Title: Effect of deposition rate and substrate microstructure on gas sensitivity of Te thin films
Authors: MOCREAC, Olga 
Keywords: deposition rate;gas sensitivity;response time;substrate;thin film
Issue Date: Dec-2019
Journal: Zastita Materijala 
Abstract: 
Tellurium thin films have been prepared using different rates (0.1 ÷ 30 nm/s) by physical deposition in vacuum on glassy, sintered alumina and electrochemically nanostructured Al2O3 substrates. The sensitivity to nitrogen dioxide of fabricated films was tested at room temperature. It is shown that the deposition rate strongly influences the microstructure of the films in question, as well as their gas sensing properties. The increasing of deposition rate results in transformation of microcrystalline structure of the film into an amorphous one. Simultaneously, both the gas - sensitivity and the response time decrease. The results are explained in terms of interaction between gas molecule and lone – pair electrons of tellurium atoms.
URI: 10.5937/zasmat1904379M
Appears in Collections:Journal Articles

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