Please use this identifier to cite or link to this item: http://cris.utm.md/handle/5014/757
Title: ELABORATION OF THE PLATFORM FOR FLEXOELECTRIC INVESTIGATION OF GaN MICROTUBES
Authors: MONAICO, Elena I. 
TRIFAN, Cătălin 
MONAICO, Eduard V. 
TIGINYANU, Ion 
Keywords: investigation chip;anodization;flexoelectricity;isotropic etching;neutral electrolyte;high etch rate;porous InP
Issue Date: 2020
Project: 20.80009.5007.20. Nanoarhitecturi în bază de GaN şi matrici tridimensionale din materiale biologice pentru aplicaţii în microfluidică şi inginerie tisulară 
Journal: Journal of Engineering Science 
Abstract: 
In this paper, the design and elaboration of a cost-effective technological process for the fabrication of the platform for the study of flexoelectric properties of GaN microtubes with the diameter of 2 - 5 μm and the thickness of the microtube walls of 50 nm is proposed. The impact of the design as well as the electrochemical etching parameters (applied voltage, duration of anodization) on the obtained channel dimensions is investigated. The proposed technological route implies electrochemical etching of n-InP semiconductor crystal in an environmentally friendly electrolyte at high etch rate. The technological process was optimized experimentally. It was proposed to introduce a perpendicular channel in which the microtube will be placed to reach a higher stability on the platform during the measurements.
Description: 
XXVII (4) pp. 45-54.
URI: http://cris.utm.md/handle/5014/757
DOI: 10.5281/zenodo.4288263
Appears in Collections:Journal Articles

Files in This Item:
File Description SizeFormat
JES-2020-4_45-54.pdf1.73 MBAdobe PDFView/Open
Show full item record

Google ScholarTM

Check

Altmetric

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.