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http://cris.utm.md/handle/5014/987| Title: | ZnO:Eu FILMS FUNCTIONALIZED WITH Pd FOR ROOM TEMPERATURE H2 SENSORS | Authors: | LUPAN, Cristian TROFIM, Viorel |
Keywords: | semiconductor, rapid thermal annealing | Issue Date: | 2020 | Conference: | InventCor 2020 | Abstract: | The invention relates to the technology for deposition of semiconductor oxide films, in particular to the process of obtaining of ZnO:Eu3+ films, with application of rapid thermal annealing (T=650 °C, t=60s), with can be applied to the manufacture of gas sensors obtaining sensibility S=I_gas/I_air =1.3 for 100 ppm H2 gas at room temperature and S=I_gas/I_air =118 at operating temperature of 250 oC. |
URI: | http://cris.utm.md/handle/5014/987 |
| Appears in Collections: | 01-Gold Medals |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| InventCor_2020_Gold_Lupan C..pdf | 1.54 MB | Adobe PDF | View/Open |
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