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Please use this identifier to cite or link to this item: http://cris.utm.md/handle/5014/519
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dc.contributor.authorLUPAN, Cristianen_US
dc.contributor.authorTROFIM, Viorelen_US
dc.date.accessioned2020-05-24T17:38:55Z-
dc.date.available2020-05-24T17:38:55Z-
dc.date.issued2020-
dc.identifier.urihttp://cris.utm.md/handle/5014/519-
dc.description.abstractThe invention relates to the technology for deposition of semiconductor oxide films, in particular to the process of obtaining of ZnO:Eu3+ films, with application of rapid thermal annealing (T=650 °C, t=60s), with can be applied to the manufacture of gas sensors obtaining sensibility S=Igas/Iair =1.3 for 100 ppm H2 gas at room temperature and S= Igas/Iair =118 at operating temperature of 250 oC.en_US
dc.titleThe deposition process of ZnO films doped with Eu and functionalized with Pden_US
dc.typeAwarden_US
dc.relation.conferenceEUROINVENT 2020en_US
item.grantfulltextopen-
item.fulltextWith Fulltext-
crisitem.author.deptDepartment of Microelectronics and Biomedical Engineering-
crisitem.author.orcid0000-0002-6620-3076-
crisitem.author.parentorgFaculty of Computers, Informatics and Microelectronics-
Appears in Collections:03-Bronze Medals
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