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Please use this identifier to cite or link to this item: http://cris.utm.md/handle/5014/987
DC FieldValueLanguage
dc.contributor.authorLUPAN, Cristianen_US
dc.contributor.authorTROFIM, Viorelen_US
dc.date.accessioned2021-11-05T13:39:54Z-
dc.date.available2021-11-05T13:39:54Z-
dc.date.issued2020-
dc.identifier.urihttp://cris.utm.md/handle/5014/987-
dc.description.abstractThe invention relates to the technology for deposition of semiconductor oxide films, in particular to the process of obtaining of ZnO:Eu3+ films, with application of rapid thermal annealing (T=650 °C, t=60s), with can be applied to the manufacture of gas sensors obtaining sensibility S=I_gas/I_air =1.3 for 100 ppm H2 gas at room temperature and S=I_gas/I_air =118 at operating temperature of 250 oC.en_US
dc.language.isoenen_US
dc.subjectsemiconductor, rapid thermal annealingen_US
dc.titleZnO:Eu FILMS FUNCTIONALIZED WITH Pd FOR ROOM TEMPERATURE H2 SENSORSen_US
dc.typeAwarden_US
dc.relation.conferenceInventCor 2020en_US
item.languageiso639-1other-
item.grantfulltextopen-
item.fulltextWith Fulltext-
crisitem.author.deptDepartment of Microelectronics and Biomedical Engineering-
crisitem.author.orcid0000-0002-6620-3076-
crisitem.author.parentorgFaculty of Computers, Informatics and Microelectronics-
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