Please use this identifier to cite or link to this item: http://cris.utm.md/handle/5014/119
Title: Terahertz shielding properties of aero-GaN
Authors: BRANISTE, Tudor 
ZHUKOV, Sergey 
DRAGOMAN, Mircea 
ALYABYEVA, Liudmila 
CIOBANU, Vladimir 
ALDRIGO, Martino 
DRAGOMAN, Daniela 
IORDANESCU, Sergiu 
SHREE, Sindu 
RAEVSCHI, Simion 
ADELUNG, Rainer 
GORSHUNOV, Boris 
TIGINYANU, Ion 
Keywords: aero-GaN;complex dielectric permittivity;THz shielding
Issue Date: 2019
Source: TY - JOUR AU - Braniste, Tudor AU - Zhukov, Sergey AU - Dragoman, Mircea AU - Alyabyeva, Liudmila AU - Ciobanu, Vladimir AU - Aldrigo, Martino AU - Dragoman, Daniela AU - Iordanescu, Sergiu AU - Shree, Sindu AU - Simion, Raevschi AU - Adelung, Rainer AU - Gorshunov, Boris AU - Tiginyanu, Ion PY - 2019/10/16 SP - T1 - Terahertz shielding properties of aero-GaN VL - 34 DO - 10.1088/1361-6641/ab4e58 JO - Semiconductor Science and Technology ER -
Project: NanoMedTwin 
Journal: SEMICONDUCTOR SCIENCE AND TECHNOLOGY 
Abstract: 
The electrodynamic properties of the first aero-material based on compound semiconductor, namely of Aero-GaN, in the terahertz frequency region are experimentally investigated. Spectra of complex dielectric permittivity, refractive index, surface impedance are measured at frequencies 4–100 cm−1 and in the temperature interval 4–300 K. The shielding properties are found based on experimental data. The aero-material shows excellent shielding effectiveness in the frequency range from 0.1 to 1.3 THz, exceeding 40 dB in a huge frequency bandwidth, which is of high interest for industrial applications. These results place the aero-GaN among the best THz shielding materials known today.
URI: http://cris.utm.md/handle/5014/119
ISSN: 0268-1242
DOI: 10.1088/1361-6641/ab4e58
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