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http://cris.utm.md/handle/5014/122| Title: | Synthesis and optical properties of Ga2O3 nanowires grown on GaS substrate | Authors: | LEONTIE, Liviu SPRINCEAN, Veaceslav UNTILA, Dumitru SPALATU, Nicolae CARAMAN, Iuliana COJOCARU, Ala SUSU, Oana LUPAN, Oleg EVTODIEV, Igor VATAVU, Elmira TIGINYANU, Ion CARLESCU, Aurelian CARAMAN, Mihail |
Keywords: | Gallium(III) trioxide;Gallium(III) sulfide;Thermal treatment;Oxidation;Structural properties;Photoluminescence | Issue Date: | 1-Nov-2019 | Source: | TY - JOUR AU - Leontie, Liviu AU - Sprincean, Veaceslav AU - Untila, Dumitru AU - Spalatu, N. AU - Caraman, Iuliana AU - Cojocaru, A. AU - Susu, Oana AU - Oleg, Lupan AU - Evtodiev, Igor AU - Vatavu, Elmira AU - Tiginyanu, Ion AU - Carlescu, Aurelian AU - Caraman, Mihail PY - 2019/08/01 SP - 137502 T1 - Synthesis and optical properties of Ga2O3 nanowires grown on GaS substrate VL - 689 DO - 10.1016/j.tsf.2019.137502 JO - Thin Solid Films ER - | Journal: | THIN SOLID FILMS | Abstract: | Gallium oxide (β-Ga2O3) nanowires were synthesized by heat treatment of single crystal β-GaS plates in air. Crystal structure and composition of synthesized materials were studied by X-ray diffraction, energy dispersive X-ray spectroscopy and Raman spectroscopy. Thermal treatment of β-GaS plates at 1023 K leads to the formation of a Ga2O3 (native oxide) layer on β-GaS (0001) surface of plates. Layer thickness and size of Ga2O3 wires contained were found to depend on temperature and duration of applied heat treatment. For 1023 K and 6 h, the length of Ga2O3 wires laid in the range from units to tens of nanometers, while for 1123 K and 30 min, between 30 and 40 μm. |
URI: | http://cris.utm.md/handle/5014/122 | DOI: | 10.1016/j.tsf.2019.137502 |
| Appears in Collections: | Journal Articles |
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| File | Description | Size | Format | |
|---|---|---|---|---|
| 1-s2.0-S0040609019305309-main.pdf | 1.19 MB | Adobe PDF | View/Open |
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