Process for obtaining Ga2O3 nanowires on GaAs substrate

Abstract

The invention relates to technology for the production of nanostructured materials, in particular to processes for obtaining nanostructures by electrochemical treatment, which can be used in microelectronics, optoelectronics and nanoelectronics. Semiconductor nanowires demonstrate an obvious potential for applications as active components in solar cells, photodetectors, light emitters, transistors and other applications. The production of nanowire in masses on semiconductor substrates is a very important technoilogical step for videning their applications. In particular, gallium oxide (Ga2O3) nanowires are widely used in catalytic applications and in the production of nanodevices such as field effect transistors, gas sensors and ultraviolet (UV) photodetectors.