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http://cris.utm.md/handle/5014/1479| Title: | Process for obtaining heterostructures with wide-bandgap nanowires on narrow-bandgap semiconductor substrate | Authors: | CIOBANU, Vladimir JIN, Irina BRANISTE, Tudor TIGINYANU, Ion |
Keywords: | Heterostructures, semiconductor, nanowires | Issue Date: | 2022 | Conference: | Inventica 2022 | Abstract: | We propose the manufacture of heterostructure with wide bandgap (Eg) semiconductor nanowires (e.g. from Ga2O3 with Eg = 4.9 eV, or In2O3 with Eg ~ 3 eV) on narrow bandgap semiconductor support with good thermal conductivity () (e.g. GaAs with Eg = 1.44 eV and = 52 W/m•K or InP with Eg = 1.34 and = 68 W/m•K). The technological process consists from 2 steps: (i) anodization of semiconductor substrates for nanowires formation, (ii) heat treatment at optimized parameters that ensure the selective oxidation only of nanowires. The advantages: accessible and cost-effective technologies. |
URI: | http://cris.utm.md/handle/5014/1479 |
| Appears in Collections: | 02-Silver Medals |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| Inventica_2022_Silver_Jin I..pdf | 7.6 MB | Adobe PDF | View/Open |
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