Please use this identifier to cite or link to this item:
http://cris.utm.md/handle/5014/1720
Title: | INFLUENCE OF THE IONIZING RADIATION ON THE ELECTRICAL AND SENSING PROPERTIES OF MOS NANOSTRUCTURES | Authors: | LUPAN, Cristian BUZDUGAN, Artur BÎRNAZ, Adrian LUPAN, Oleg |
Keywords: | semiconductor, nanostructures | Issue Date: | 2023 | Conference: | Inventica 2023 | Abstract: | In this research project, the influence of ionizing radiation dose from a Cs-137 source on the electrical and sensory properties of metal-oxide semiconductor nanostructures (eg ZnO:Eu, ZnO:Fe, CuO, etc.) was studied. The resistance of the samples was measured in real time during irradiation at room temperature. Shortly after irradiation, the volt-ampere characteristics and sensor properties were measured in the temperature range from 20 °C to 350 °C. It was observed that the resistance practically did not change during irradiation, instead the sensory properties of some gases improved considerably. |
URI: | http://cris.utm.md/handle/5014/1720 |
Appears in Collections: | 01-Gold Medals |
Files in This Item:
File | Description | Size | Format | |
---|---|---|---|---|
Inventica_2023_Gold_Lupan C..pdf | 3.6 MB | Adobe PDF | View/Open |
Google ScholarTM
Check
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.