Please use this identifier to cite or link to this item: http://cris.utm.md/handle/5014/1720
Title: INFLUENCE OF THE IONIZING RADIATION ON THE ELECTRICAL AND SENSING PROPERTIES OF MOS NANOSTRUCTURES
Authors: LUPAN, Cristian 
BUZDUGAN, Artur 
BÎRNAZ, Adrian 
LUPAN, Oleg 
Keywords: semiconductor, nanostructures
Issue Date: 2023
Conference: Inventica 2023
Abstract: 
In this research project, the influence of ionizing radiation dose from a Cs-137 source on the electrical and sensory properties of metal-oxide semiconductor nanostructures (eg ZnO:Eu, ZnO:Fe, CuO, etc.) was studied. The resistance of the samples was measured in real time during irradiation at room temperature. Shortly after irradiation, the volt-ampere characteristics and sensor properties were measured in the temperature range from 20 °C to 350 °C. It was observed that the resistance practically did not change during irradiation, instead the sensory properties of some gases improved considerably.
URI: http://cris.utm.md/handle/5014/1720
Appears in Collections:01-Gold Medals

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