Please use this identifier to cite or link to this item: http://cris.utm.md/handle/5014/215
Title: Manufacturing highly conductive ceramic targets and thin films of ZnO
Authors: COLIBABA, Gleb 
FEDOROV, Vladimir 
RUSNAC, Dumitru 
GRABCO, Daria 
MONAICO, Eduard 
PETRENKO, Peter 
ROTARU, C. 
Issue Date: 2019
Source: COLIBABA, Gleb; FEDOROV, Vladimir; RUSNAC, Dumitru; GRABCO, Daria; MONAICO, Elena; PETRENKO, Peter; ROTARU, C.. Manufacturing highly conductive ceramic targets and thin films of ZnO. In: NANO-2019: Limits of Nanoscience and Nanotechnologies. 24-27 septembrie 2019, Chişinău. Chișinău, Republica Moldova: 2019, p. 78.
Project: 15.817.02.29A. Multifunctional nanomaterials and nanoelectronic devices based on nitrides, oxides and chalcogenides for biomedicine / Nanomateriale multifuncţionale şi dispozitive nanoelectronice în bază de nitruri, oxizi şi calcogenuri pentru biomedicină 
Conference: NANO-2019: Limits of Nanoscience and Nanotechnologies
Abstract: 
The present investigation addresses a novel approach for sintering ZnO ceramics by means of chemical vapor transport (CVT) using compound transport agents. The typical size of obtained ZnO ceramics was 25 mm in diameter and 1 mm thickness. The sintering ZnO ceramics at the use of HCl+H2+C, is the most perspective and effective method, which has the following advantages: the low sintering temperature of 1070 °C, 99% of the initial diameter, 80% of single crystal hardness, 90-95% of ZnO density, the low resistivity of 0.025 W×cm, free from powder pressing, free from attachment effect and contamination. ZnO targets with resistivity of 2×10–3 W×cm, additionally doped by donor impurities, can be successfully sintered at low temperatures. ZnO thin films (~ 400 nm), obtained by DC magnetron sputtering, have the following parameters: the optical transparency is about 90% in the visible range, resistivity of 4×10-4 W×cm, free electron concentration of 3×1021 cm-3, and hall mobility of 6 cm2/Vs. The proposed technology simplifies and reduces the price of manufacturing uniformly doped ZnO ceramic targets, thin films and optoelectronic devices based on ZnO.
URI: https://ibn.idsi.md/ro/vizualizare_articol/92978
http://cris.utm.md/handle/5014/215
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