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http://cris.utm.md/handle/5014/495| Title: | Me-ZnP2 Diodes Sensible to Optical Gyration | Authors: | DOROGAN, Andrei BERIL, Stephan STAMOV, Ivan SIRBU, Nicolae |
Keywords: | schottky diodes;optical gyration;anisotropy | Issue Date: | 2020 | Publisher: | Springer, Cham | Source: | Dorogan A.V., Beril S.I., Stamov I.G., Syrbu N.N. (2020) Me-ZnP2 Diodes Sensible to Optical Gyration. In: Tiginyanu I., Sontea V., Railean S. (eds) 4th International Conference on Nanotechnologies and Biomedical Engineering. ICNBME 2019. IFMBE Proceedings, vol 77. Springer, Cham | Journal: | IFMBE Proceedings | Abstract: | Spatial dispersion in ZnP2-D 4 8 has been studied. The spectral dependences of the refractive index nc(Eǁc, kǁa), na(Eǁa, kǁc) and nb(Eǁb, kǁc) had been determined. It was shown that the dispersion is positive nc(Eǁc, kǁa), na(Eǁa, kǁc) > nb(Eǁb, kǁc) in λ > λ0 region, the dispersion is negative nc(Eǁc, kǁa) at λ < λ0, and Δn = nc – nb= 0 at λ = λ0. The LIV characteristics of Me-ZnP2-D 4 8 diodes had been studied at different temperatures, the temperature dependences of the “imperfection” factor δ for different Schottky barriers. Capacitance voltage characteristics of Me-ZnP2-D 4 8 photodiodes obtained by electrochemical deposition of metal and by thermo-chemical spraying in vacuum had been studied. The influence of birefringence and gyration on spectral characteristics of p-n photodiodes and Schottky diodes had been revealed. The ability of controlling photodiodes’ characteristics was obtained using the gyration particularities in ZnP2-D 4 8 crystals. |
URI: | http://cris.utm.md/handle/5014/495 | ISBN: | 978-3-030-31866-6 978-3-030-31865-9 |
ISSN: | 1680-0737 | DOI: | 10.1007/978-3-030-31866-6_34 |
| Appears in Collections: | Proceedings Papers |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| Me-ZnP2_DOROGAN_A.pdf | 33.15 kB | Adobe PDF | View/Open |
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