Please use this identifier to cite or link to this item: http://cris.utm.md/handle/5014/567
Title: Porous semiconductor compounds
Authors: MONAICO, Eduard 
TIGINYANU, Ion 
URSAKI, Veaceslav 
Issue Date: 2020
Source: MONAICO, E., TIGINYANU, I., URSAKI, V. Porous semiconductor compounds. In: Semiconductor Science and Technology. 2020 (IF 2.654) Accepted Manuscript Online https://doi.org/10.1088/1361-6641/ab9477
Project: 20.80009.5007.20. Nanoarhitecturi în bază de GaN şi matrici tridimensionale din materiale biologice pentru aplicaţii în microfluidică şi inginerie tisulară 
NanoMedTwin - Promoting smart specialization at the Technical University of Moldova by developing the field of Novel Nanomaterials for BioMedical Applications through excellence in research and twinning (#810652) 
Journal: Semiconductor Science and Technology 
Abstract: 
In this review paper, we present a comparative analysis of the electrochemical dissolution of III-V (InP, GaAs, GaN), II-VI (ZnSe, CdSe) and SiC semiconductor compounds. The resulting morphologies are discussed including those of porous layers and networks of low-dimensional structures such as nanowires, nanobelts, nanomembranes etc. Self-organized phenomena in anodic etching are disclosed, leading to the formation of controlled porous patterns and quasi-ordered distribution of pores. Results of templated electrochemical deposition of metal nanowires, nanotubes and nanodots are summarized. Porosification of some compounds is shown to improve luminescence characteristics as well as to enhance photoconductivity, second harmonic generation and Terahertz emission. Possible applications of porous semiconductor compounds in various areas are discussed.
URI: http://cris.utm.md/handle/5014/567
DOI: 10.1088/1361-6641/ab9477
Appears in Collections:Journal Articles

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