Please use this identifier to cite or link to this item: http://cris.utm.md/handle/5014/668
Title: ZnO:Eu FILMS FUNCTIONALIZED WITH Pd FOR ROOM TEMPERATURE H2 SENSORS
Authors: LUPAN, Cristian 
TROFIM, Viorel 
Issue Date: 2020
Conference: InventCor 2020
Abstract: 
The invention relates to the technology for deposition of semiconductor oxide films, in particular to the process of obtaining of ZnO:Eu3+ films, with application of rapid thermal annealing (T=650 °C, t=60s), with can be applied to the manufacture of gas sensors obtaining sensibility S=I_gas/I_air =1.3 for 100 ppm H2 gas at room temperature and S=I_gas/I_air =118 at operating temperature of 250 oC.
URI: http://cris.utm.md/handle/5014/668
Appears in Collections:01-Gold Medals

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