Please use this identifier to cite or link to this item: http://cris.utm.md/handle/5014/754
Title: Low-temperature sintering of highly conductive ZnO:Ga:Cl ceramics by means of chemical vapor transport
Authors: COLIBABA, Gleb 
RUSNAC, Dumitru 
FEDOROV, Vladimir 
PETRENKO, Peter 
MONAICO, Eduard 
Keywords: Halide vapor transport;zinc oxide;Highly conductive ceramics;Doping by GaZnO;Thin films
Issue Date: 2021
Source: G.V. Colibaba, D. Rusnac, V. Fedorov, P. Petrenko, E.V. Monaico, Low-temperature sintering of highly conductive ZnO:Ga:Cl ceramics by means of chemical vapor transport, Journal of the European Ceramic Society, Volume 41, Issue 1, 2021, pp. 443-450, ISSN 0955-2219, https://doi.org/10.1016/j.jeurceramsoc.2020.08.002.
Journal: Journal of the European Ceramic Society
Abstract: 
A new technology for sintering a ZnO + Ga2O3 powder via chemical vapor transport based on HCl has been developed. The proposed sintering method has the following advantages: a low sintering temperature of 1000–1100 °C, there is no need to use of expensive dopant nanopowders, the possibility of multiple re-sintering, and the absence of changes in the diameter of the ceramics after sintering. A ZnO:Ga:Cl ceramics with a density of 5.31 g/cm3, a hardness of 2.0 GPa, and a resistivity of 1.46 × 10–3 Ω⋅cm has been synthesized. The solubility limit of the Ga2O3 dopant has been estimated at about 3 mol %. At a higher doping level, the content of the ZnGa2O4 spinel phase becomes significant. In addition, ZnO:Ga:Cl thin films with a resistivity of 2.77 × 10–4 Ω⋅cm can be grown by DC magnetron sputtering of the synthesized ceramics.
Description: 
Volume 41, Issue 1, January 2021, Pages 443-450
URI: http://cris.utm.md/handle/5014/754
DOI: 10.1016/j.jeurceramsoc.2020.08.002
Appears in Collections:Journal Articles

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