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http://cris.utm.md/handle/5014/840| Title: | n-BUTANOL SENSOR BASED ON ZnO-Al2O3 HETEROJUNCTION | Authors: | MAGARIU, Nicolae TROFIM, Viorel LUPAN, Oleg |
Keywords: | semiconductors, butanol | Issue Date: | 2021 | Conference: | Euroinvent 2021 | Abstract: | The invention relates to the technique and technology of oxide semiconductors, in particular to butanol sensors based on ZnO-Al2O3 heteronjunctions. Butanol is widely used as a solvent for the manufacture of varnishes and paints. For butanol, the odor threshold is at 14-16 ppm, but the permissible limit of its concen-tration in air ≈ 3.3 ppm. For these reasons it is necessary to make sensors sensitive to low concentrations of butanol. The pro¬blem solved by the proposed invention is the manufacture of an n-Butanol sensor with a higher sensitivity to low gas concentrations. |
URI: | http://cris.utm.md/handle/5014/840 |
| Appears in Collections: | 01-Gold Medals |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| Euroinvent_2021_Gold_Magariu N..pdf | 200.46 kB | Adobe PDF | View/Open |
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