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http://cris.utm.md/handle/5014/1456| Title: | Ultrathin tin sulfide field-effect transistors with subthreshold slope below 60 mV/ decade | Authors: | DRAGOMAN, Mircea DINESCU, Adrian AVRAM, Andrei DRAGOMAN, Daniela VULPE, Silviu ALDRIGO, Martino BRANISTE, Tudor SUMAN, Victor RUSU, Emil TIGINYANU, Ion |
Keywords: | 2D materials ferroelectricity;RF magnetron sputtering;ferroelectrics;microwaves;semiconductors;thin films;tin sulfide | Issue Date: | 2022 | Publisher: | IOP Publishing | Source: | Dragoman M, Dinescu A, Avram A, Dragoman D, Vulpe S, Aldrigo M, Braniste T, Suman V, Rusu E, Tiginyanu I. Ultrathin tin sulfide field-effect transistors with subthreshold slope below 60 mV/decade. Nanotechnology. 2022 Jul 15;33(40). doi: 10.1088/1361-6528/ac7cf8 | Project: | NanoMedTwin - Promoting smart specialization at the Technical University of Moldova by developing the field of Novel Nanomaterials for BioMedical Applications through excellence in research and twinning (#810652) 20.80009.5007.20. Nanoarhitecturi în bază de GaN şi matrici tridimensionale din materiale biologice pentru aplicaţii în microfluidică şi inginerie tisulară |
Journal: | Nanotechnology | Series/Report no.: | ;35767973 | Abstract: | In this paper, we present for the first time a field-effect-transistor (FET) having a 10 nm thick tin sulfide (SnS) channel fabricated at the wafer scale with high reproducibility. SnS-based FETs are in on-state for increasing positive back-gate voltages up to 6 V, whereas the off-state is attained for negative back-gate voltages not exceeding -6 V, the on/off ratio being in the range 102-103depending on FET dimensions. The SnS FETs show a subthreshold slope (SS) below 60 mV/decade thanks to the in-plane ferroelectricity of SnS and attaining a minimum value SS = 21 mV/decade. Moreover, the low SS values can be explained by the existence of a negative value of the capacitance of the SnS thin film up to 10 GHz (for any DC bias voltage between 1 and 5 V), with the minimum value being -12.87 pF at 0.1 GHz. |
Description: | Volume 33, Number 40 |
URI: | http://cris.utm.md/handle/5014/1456 | DOI: | 10.1088/1361-6528/ac7cf8 |
| Appears in Collections: | Journal Articles |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| Dragoman_2022_Nanotechnology_33_405207.pdf | 1.27 MB | Adobe PDF | View/Open |
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