Please use this identifier to cite or link to this item: http://cris.utm.md/handle/5014/617
Title: Crystallinity and optical properties of β-Ga2O3/Ga2S3 layered structure obtained by thermal annealing of Ga2S3 semiconductor
Authors: SPRINCEAN, Veaceslav 
LUPAN, Oleg 
CARAMAN, Iuliana 
UNTILA, Dumitru 
POSTICA, Vasile 
COJOCARU, Ala 
GAPEEVA, Anna 
PALACHI, Leonid 
ADELUNG, Rainer 
TIGINYANU, Ion 
CARAMAN, Mihail 
Keywords: Gallium oxide;β-Ga2O3/Ga2S3;Crystalline β-Ga2S3;Semiconductor;Scanning electron microscopy
Issue Date: 2021
Source: Sprincean, V., Lupan, O., Caraman, I., Untila, D., Postica, V., Cojocaru, A., Gapeeva, A., Palachi, L., Adeling, R., Tiginyanu, I., Caraman, M., 2021. Crystallinity and optical properties of β-Ga2O3/Ga2S3 layered structure obtained by thermal annealing of Ga2S3 semiconductor. Materials Science in Semiconductor Processing.. doi:10.1016/j.mssp.2020.105314
Project: 15.817.02.34A. 
NanoMedTwin - Promoting smart specialization at the Technical University of Moldova by developing the field of Novel Nanomaterials for BioMedical Applications through excellence in research and twinning 
20.80009.5007.09. Elaborarea şi lansarea seriei de nanosateliţi cu misiuni de cercetare de pe Staţia Spaţială Internaţională, monitorizarea, postoperarea lor şi promovarea tehnologiilor spaţiale 
Journal: Materials Science in Semiconductor Processing
Abstract: 
In this work, the β-Ga2O3 nanostructures were obtained by thermal annealing in air of β-Ga2S3 single crystals at relatively high temperatures of 970 K, 1070 K and 1170 K for 6 h. The structural, morphological, chemical and optical properties of β-Ga2O3–β-Ga2S3 layered composites grown at different temperatures were investigated by means of X-ray diffraction (XRD), scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDX) as well as photoluminescence spectroscopy (PL) and Raman spectroscopy. The results show that the properties of obtained β-Ga2O3–β-Ga2S3 composites were strongly influenced by the thermal annealing temperature. The XRD and Raman analyses confirmed the high crystalline quality of the formed β-Ga2O3 nanostructures. The absorption edge of the oxide is due to direct optical transitions. The optical bandwidth was estimated to be approximately 4.34-4.41 eV, depending on the annealing temperature. Annealing of the β-Ga2S3 monocrystals at a higher temperature of 1170 K showed the complete conversion of the surface to β-Ga2O3. These results demonstrate the possibility to grow high quality β-Ga2O3–β-Ga2S3 layered composites and β-Ga2O3 nanostructures in large quantities for various applications such as gas sensing, non-toxic biomedical imaging, nonlinear optical, as well as power device applications. Micro and nanocrystallites present on the surface of the Ga2O3 layer contribute to a diffusion of the incident light which leads to an increase of the absorption rate allowing thus to reduce the thickness of the Ga2O3 layer, in which the generation of unbalanced charge carriers takes place. By decreasing the Ga2O3 layer thickness in such layered composites, the efficiency of photovoltaic cells based on such junctions can be increased.
URI: http://cris.utm.md/handle/5014/617
DOI: 10.1016/j.mssp.2020.105314
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