Please use this identifier to cite or link to this item: http://cris.utm.md/handle/5014/756
Title: Evolution of Pore Growth in GaAs in Transitory Anodization Regime from One Applied Voltage to Another
Authors: MONAICO, Elena I. 
MONAICO, Eduard V. 
URSAKI, Veaceslav 
TIGINYANU, Ion 
Keywords: successive anodization;porous GaAs;crystallographically oriented pores;triangular shape;round shape
Issue Date: 2021
Project: 20.80009.5007.20. Nanoarhitecturi în bază de GaN şi matrici tridimensionale din materiale biologice pentru aplicaţii în microfluidică şi inginerie tisulară 
NanoMedTwin - Promoting smart specialization at the Technical University of Moldova by developing the field of Novel Nanomaterials for BioMedical Applications through excellence in research and twinning 
Journal: SURFACE ENGINEERING AND APPLIED ELECTROCHEMISTRY
Abstract: 
The paper reports the results of investigation of the pore growth during anodic etching of (111)-oriented wafers of Si-doped n-GaAs in an environmentally friendly NaCl based electrolyte, with switching the applied voltage from a high voltage to lower one and vice-versa. Switching of the applied voltage in the process of anodization was found to cause the formation of layered porous structures with...
Description: 
57, pp. 165–172 (2021)
URI: http://cris.utm.md/handle/5014/756
ISSN: 1068-3755
DOI: 10.3103/S106837552102006X
Appears in Collections:Journal Articles

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