Please use this identifier to cite or link to this item: http://cris.utm.md/handle/5014/756
Title: Evolution of Pore Growth in GaAs in Transitory Anodization Regime from One Applied Voltage to Another
Authors: MONAICO, Elena I. 
MONAICO, Eduard V. 
URSAKI, Veaceslav 
TIGINYANU, Ion 
Keywords: successive anodization;porous GaAs;crystallographically oriented pores;triangular shape;round shape
Issue Date: 2021
Project: 20.80009.5007.20. Nanoarhitecturi în bază de GaN şi matrici tridimensionale din materiale biologice pentru aplicaţii în microfluidică şi inginerie tisulară 
NanoMedTwin - Promoting smart specialization at the Technical University of Moldova by developing the field of Novel Nanomaterials for BioMedical Applications through excellence in research and twinning 
Journal: SURFACE ENGINEERING AND APPLIED ELECTROCHEMISTRY
Abstract: 
The paper reports the results of investigation of the pore growth during anodic etching of (111)-oriented wafers of Si-doped n-GaAs in an environmentally friendly NaCl based electrolyte, with switching the applied voltage from a high voltage to lower one and vice-versa. Switching of the applied voltage in the process of anodization was found to cause the formation of layered porous structures with different degrees of porosity. Crystallographically oriented pores shaped as triangular prisms were produced in a stationary regime of anodization, while a more complex morphology of pores was observed at the interface between the two layers with different degrees of porosity, including pores composed of three circular ones. Based on the results of the morphology study using scanning electron microscopy, a possible mechanism of the formation of such kind of pores in the dynamic transitory regime of anodizing is discussed.
Description: 
57, pp. 165–172 (2021)
URI: http://cris.utm.md/handle/5014/756
ISSN: 1068-3755
DOI: 10.3103/S106837552102006X
Appears in Collections:Journal Articles

Files in This Item:
File Description SizeFormat
Monaico2021_Article_EvolutionOfPoreGrowthInGaAsInT.pdf2.75 MBAdobe PDFView/Open
Show full item record

Google ScholarTM

Check

Altmetric

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.